By Mitiko Miura-Mattausch
This quantity presents a well timed description of the most recent compact MOS transistor versions for circuit simulation. the 1st iteration BSIM3 and BSIM4 versions that experience ruled circuit simulation within the final decade are not any longer in a position to characterizing all of the very important beneficial properties of contemporary sub-100nm MOS transistors. This e-book discusses the second one iteration MOS transistor types which are now in pressing call for and being introduced into the preliminary section of producing purposes. It considers how the versions are to incorporate the whole drift-diffusion concept utilizing the outside power variable within the MOS transistor channel so as to provide one characterization equation.
- Semiconductor gadget Physics
- Basic Compact Surface-Potential version of the MOSFET
- Advanced MOSFET Phenomena Modeling
- Leakage Currents and Junction Diode
- Modeling of Phenomena vital for RF functions
- Summary of HiSIM s version Equations, Parameters, and Parameter-Extraction strategy.
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Additional resources for The physics and modeling of MOSFETS: surface-potential model HiSIM
102) where the built-in potential Vbi can be calculated by Eq. 83). The depletion lengths in p and n regions can be derived from Eqs. 103) dn = 2 Vbi = qND W 2 NA /ND Vbi . 21 shows the depletion layer widths of an abrupt p-n junction formed in silicon as a function of NA for fixed ND = 1016 cm−3 . For the case of NA = ND (= 1016 cm−3 ), depletion layer sizes of both the p and n sides are the same, which is a fairly trivial case. If NA is different from ND , the depletion layer width shrinks on the higher impurity density side and grows on the lower impurity density side, because the charge neutrality (Eq.
For a p-type semiconductor, by simply swapping the subscripts “D” for “A” in Eqs. 50) p= Nv NA − ND exp gA ND ∆EA kT (freeze-out region). 51) In the discussion above, the minority carriers (holes in the n-type semiconductor, electrons in the p-type semiconductor) have been neglected. The minority carrier concentration can be determined from the majority carrier concentration by the mass action law (see Eq. 34)). 4 Fermi Level This section is dedicated to the discussion of Fermi levels in impure semiconductors.
Inside the depletion layer, the change in potential energy from the thermal equilibrium value (q[φ(0) − φ(−∞)] and −q[φ(∞) − φ(0)] for the valence and conduction bands, respectively) is of the order Eg kT as indicated in Fig. 17, so that n nn0 = ND and p pp0 = NA . Therefore, the charge density can be well approximated by ρ(x) = q[ND (x) − NA (x)] in the depletion layer −dp < x < dn except for the area extremely close to x = −dp and x = dn . With the above approximations, the Poisson equation April 24, 2008 12:29 WSPC/Book Trim Size for 9in x 6in HiSIM˙book Semiconductor Device Physics 37 Carrier density n-type p-type NA n (x) p (x) (a) ND x Depletion −dp dn layer Charge density qN D (b) −dp x dn −qNA Potential −dp dn 2 qN D dn 2 ∋ φ(∞)= V bi x 2 qN A dp φ(− ∞) = − 2 (c) ∋ Fig.
The physics and modeling of MOSFETS: surface-potential model HiSIM by Mitiko Miura-Mattausch