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By Osamu Hanaizumi; Masafumi Unno; Gunma Daigaku. International Education and Research Center for Silicon Science.; Gunma Daigaku. Advanced Technology Research Center

ISBN-10: 3038134813

ISBN-13: 9783038134817

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Additional info for Silicon science and advanced micro-device engineering I : selected, peer reviewed papers from the 5th International Symposium on Silicon Science and the 1st International Conference on Advanced Micro-Device Engineering (ISSS & AMDE 2009), was held by the

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Shindo, K. Matsumoto and K. Shishido: Synlett (2005), p. 176 (h) C. Wolf and R. Lerebours: Synthesis (2005), p. E. M. Kallemeyn: J. Org. Chem. Vol. 70 (2005), p. 2839 (b) H. Taguchi, K. Ghoroku, M. Tadaki, A. Tsubouchi and T. Takeda: J. Org. Chem. Vol. 67 (2002), p. 8450, and reference cited therein. (c) See also refs 2k, 2q, 2t and 7e. [8] All the reagents examined were non-hygroscopic white powder, which could be kept under air at rt without obvious loss of the reactivity. E. Denmark and Z. Wang: J.

References [1] P. T. Diallo, P. Boutinaud, R. Mahiou and J. C. Cousseins: Phys. Stat. Sol. (a) Vol. 160 (1997), p. 255 [2] P. T. Diallo, K. Jeanlouis, P. Boutinaud, R. Mahiou, and J. C. Cousseins: J. Alloys and Compd. Vol. 323-324 (2001), p. 218 [3] S. Itoh, H. Toki, K. Tamura and F. Kataoka: Jpn. J. Appl. Phys. Vol. 38 (1999), p. 6387 [4] H. Takashima, K. Shimada, N. Miura, T. Katsumata, Y. Inaguma, K. Ueda and M. Itoh: Adv. Mater. Vol. 21 (2009), p. 3699 [5] W. Tang and D. Chen: Mater. Res. Bull.

The dc conductivity σ of Li2GexSi1-xO3 was estimated from the fitted curve. 0) for the second cooling process is shown in Fig. 5. The ionic conductivity of Li2GexSi1-xO3 increased exponentially with increasing temperature, suggesting that the ionic conduction mechanism is a thermal activation type. 9 d [Å] which is caused by non-uniform distortion of the crystallite. Fig. 3 shows the x dependence of the diffraction angle 2θ (closed circle) and spacing of lattice planes d (closed square) for the diffraction peak of the (200) plane.

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Silicon science and advanced micro-device engineering I : selected, peer reviewed papers from the 5th International Symposium on Silicon Science and the 1st International Conference on Advanced Micro-Device Engineering (ISSS & AMDE 2009), was held by the by Osamu Hanaizumi; Masafumi Unno; Gunma Daigaku. International Education and Research Center for Silicon Science.; Gunma Daigaku. Advanced Technology Research Center


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