Optoelectronic Devices: Design, Modeling, and Simulation by Xun Li PDF

By Xun Li

ISBN-10: 0511577494

ISBN-13: 9780511577499

ISBN-10: 0511581149

ISBN-13: 9780511581144

ISBN-10: 0521875102

ISBN-13: 9780521875103

With a transparent program concentration, this e-book explores optoelectronic equipment layout and modeling via physics types and systematic numerical research. by means of acquiring strategies without delay from the physics-based governing equations via numerical ideas, the writer exhibits how you can strengthen new units and the way to reinforce the functionality of latest units. Semiconductor-based optoelectronic units akin to semiconductor laser diodes, electroabsorption modulators, semiconductor optical amplifiers, superluminescent mild emitting diodes and their integrations are all lined. together with step by step sensible layout and simulation examples including designated numerical algorithms, this publication presents researchers, gadget designers and graduate scholars in optoelectronics with the numerical ideas to procure strategies for his or her personal buildings.

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Additional info for Optoelectronic Devices: Design, Modeling, and Simulation

Example text

35) is used. 34) subject to the boundary condition of the cross-sectional structure, the transverse optical mode φ(x, y) is unique. 137), however, the longitudinal optical mode pair ef ,b (z) is not unique. Actually, there must be an infinite number of longitudinal mode pairs because of the energy leakage. Therefore, the 3D mode index should be assigned to the longitudinal mode pair ef ,b (z). 42) is used and those fast oscillation terms with factors e±2jβ0 z are all dropped. c. 126) form the standing wave model where the longitudinal field envelope function has been split into a spatially dependent part, the longitudinal optical mode, and a time-dependent part, the mode amplitude, or the photon amplitude once it is normalized to a dimensionless quantity.

125a) will be used throughout. 125b) is used. 126) with m ∈ L, and gV lm (t) ≡ j k0 n sm (t) ≡ − (r ω0 ) v m (r ) dχVdV V (t)v l (r )d r v 2m (r)d r v m (r ) ∂t∂ J sp d r je jω0 t √ µ0 2nω0 ε0 v 2m (r)d r , . 130) and with in the above integrals defined as the entire space in which the optical field spreads. 124), we can assign any dimensions to the eigenfunction v m (r ). 126) can always be normalized as long as the inhomogeneous spontaneous emission contribution is scaled in the same way. A convenient option is to assign |Um (t)|2 as the dimensionless photon number of the mth eigenfunction.

66) 2 2 where again vg ≡ c/ng ≈ cneff /n2 and neff ≈ n are assumed. 66) governs the envelope function of the optical wave propagating along +z. 66) because of the material bidirectional symmetry along ±z. 57) and s b (x, z, t) = s f (x, −z, t), respectively. 55) in y, form the governing equations for modeling 21 Optical models the partially confined (along the vertical direction y) optical wave propagation along ±z. 67). 67), the envelope function changes only slowly with z and t, which indicates the wave propagation along ±z; its change in x, however, will be determined by the boundary conditions imposed in the x direction, which is normally related to the device lateral structure, and its rate of change may not slow.

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Optoelectronic Devices: Design, Modeling, and Simulation by Xun Li


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