By Simon Deleonibus
This ebook supplies a cutting-edge assessment through internationally-recognized researchers of the leap forward units architectures required for destiny clever built-in structures first ebook within the Pan Stanford sequence on clever Nanosystems. either complex Silicon established CMOS applied sciences and New Paths to Augmented Silicon CMOS applied sciences, showing within the first part and the second one part respectively, characteristic extra Moore, greater than Moore and past kind of units of curiosity to development Heterogeneous built-in structures. the 1st part highlights complex Silicon established CMOS applied sciences with totally Depleted Planar, Trigate and Nanowire MOSFETs, Schottky resource and drains architectures and attainable applicants channel fabrics to be co built-in with Silicon On Insulator corresponding to Ge, III-V and Carbon or isolate silicon channel with Diamond. New machine and sensible architectures are to boot reviewed by means of Tunneling box impact Transistors and 3D Monolithic Integration which the choice fabrics may be able to use sooner or later. the way in which shall we increase Silicon applied sciences is illustrated through the co-integration of recent forms of units resembling Molecular and Resistive, Spintronics dependent thoughts, clever Sensors utilizing Nano scale good points co-integrated with silicon CMOS or above it. 3D integration and Wafer point Packaging are arising to boot to close up new capabilities and items. The demanding situations to be addressed and attainable recommendations are defined during this booklet.
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Extra resources for Intelligent Integrated Systems: Devices, Technologies, and Architectures
Defay. and More Than Moore integrated devices. Electron Devices Meeting, San Francisco, CA; December 2010:42–45. 10. S. Deleonibus, ed. Electronic Devices Architectures for the Nano-CMOS Era. Pan Stanford Publishing, Singapore, 2008, and also http://www. ru/SVA/NSM/Semicond/ 11. Q. Rafhay Raphael Clerc, Jean Coignus, et al. 47As nMOS capacitors. ULIS, Glasgow, UK, March 2010:50–53. 12. -P. Mazellier, J. Widiez, F. Andrieu, et al. First demonstration of heat dissipation improvement in CMOS technology using silicon-on-diamond 15 February 25, 2014 17:11 PSP Book - 9in x 6in 00-Introduction-Deleonibus 16 Introduction (SOD) substrates.
1 Limiting factors Variability of threshold voltage (VT ) is widely known as one of the most critical challenges for the future CMOS technological nodes. Scaling, density, functionality performance and even reliability of a nanoelectronic circuit depend on the transistor variability performance. MOS threshold voltage local variations in bulk technology are mainly due to the three following sources [11, 12]: (i) random dopant ﬂuctuations (RDF) in the channel, (ii) gate length ﬂuctuations linked to the line-edge roughness (LER) of the gate and the random dopant ﬂuctuations near the extension edges, (iii) variations of ﬁxed or trapped charges and workfunction ﬂuctuations coming from the gate stack.
L. Hyung-Kyu and J. G. Fossum. Threshold voltage of thin-ﬁlm silicon-oninsulator (SOI) MOSFET’s. IEEE Trans Electron Devices. 1983; 30: 1244– 1251. 5. W. Schwarzenbach, X. Cauchy, F. Boedt, et al. Excellent silicon thickness uniformity on ultra-thin SOI for controlling VT variation of FDSOI. Proceedings of the IEEE International Conference on IC Design and Technology (ICICDT). 2011: 1–3. 6. M. Jurczak, T. Skotnicki, M. Paoli, et al. SON (silicon on nothing): a new device architecture for the ULSI era.
Intelligent Integrated Systems: Devices, Technologies, and Architectures by Simon Deleonibus