By J. E. Fisher, H. B. Gatland and P. Hammond (Auth.)
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Extra resources for Devices and Amplifier Design. Electronics from Theory Into Practice
In this table the top expressions in each case are exact, while the lower expressions are approximate. CHAPTER 2 SCR-UJT-FET INTRODUCTION This chapter is concerned with three specific devices, the thyristor or silicon-controlled rectifier, the unijunction transistor and the field effect transistor. The SCR is essentially a semiconductor switch which is used in a wide variety of applications. It enables large currents to be controlled with small input signals. The UJT, on the other hand, with the advent of integrated circuits, is now probably of greater interest to the experimenter than to the professional electronics design engineer.
Degree of stabilization to the operating point. The performance equations of this circuit are: (neglecting IB in comparison with J c ), VC^F Vcc -IcRc Ic — ßlß + IcEO, Ι Β Φ VCIRBC (neglecting VBE in comparison with V c ). Combining these equations, r *. P. 21) The factor K is the stabilization factor and should obviously be as large as possible. In this case, this is achieved by using a transistor with a large ß. 5 V/60 μΑ = 75 kil. 7. Disadvantages 1. The collector current must always be greater than Icuo.
1a. The equivalent structure of Fig. 1b shows how it may be represented by a pnp-npn complementary pair of transistors Anode (c) P ty/^À p Til· e bJ * , (b) Cathode O Fig. 1. The thyristor is a four-layer device whose action may be simulated by a complementary pair of bipolar transistors. 50 SCR—UJT—FET 51 connected as shown, and having current gains ax and a2 respectively. The four-layer device has three junctions, Ju J2 and J3. With an applied bias VAc, which makes A (the anode) positive with respect to C (the cathode), junctions Λ and J3 are forward biased.
Devices and Amplifier Design. Electronics from Theory Into Practice by J. E. Fisher, H. B. Gatland and P. Hammond (Auth.)