Download PDF by Michael Orshansky: Design for Manufacturability and Statistical Design: A

By Michael Orshansky

ISBN-10: 0387309284

ISBN-13: 9780387309286

ISBN-10: 0387690115

ISBN-13: 9780387690117

Design for Manufacturability and Statistical layout: A optimistic Approach presents an intensive remedy of the reasons of variability, tools for statistical facts characterization, and methods for modeling, research, and optimization of built-in circuits to enhance yield. the target of the confident technique constructed during this publication is to formulate a constant set of equipment and ideas priceless for rigorous statistical layout and layout for manufacturability from equipment physics to large-scale circuit optimization. The segments of the booklet are committed, respectively, to

  • understanding the motives of variability;
  • design of try out buildings for variability characterization;
  • statistically rigorous facts analysis;
  • techniques of layout for manufacturability in lithography and in chemical mechanical polishing;
  • statistical simulation, research, and optimization thoughts for making improvements to parametric yield.

Design for Manufacturability and Statistical layout: A positive Approach provides an summary of the tools that have to be mastered for state of the art layout for manufacturability and statistical layout methodologies. it's a big reference for practitioners and scholars within the box of computer-aided layout of built-in circuits.

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Extra info for Design for Manufacturability and Statistical Design: A Constructive Approach

Example text

In macroloading, the etching bias is determined by the average loading across the wafer [25]. , logic, DRAM, and gate arrays. 4 Line Edge Roughness Despite the limitations of the patterning process discussed so far, the existing photolithographic processes are capable of producing a consistent poly line edge. 2 VARIABILITY OF GATE LENGTH 23 below 32nm [12]. Line edge roughness is the local variation of the edge of the polysilicon gate along its width. The reasons for the increased LER in the future processes include the random variation in the incoming photon count during exposure and the contrast of aerial image, as well as the absorption rate, chemical reactivity, and the molecular composition of resist [27] [49].

This may ultimately lead to the creation of shorts between the wires when the dislocated atoms of two neighboring wires are contacted. This may also lead to the creation of an open failure in the wire when the dislocated atoms produce a void in the wire that damages its electrical connectivity. 9 SUMMARY Variability in the front-end of the process technology will continue to be the main contributor to the overall budget of variability. There are multiple systematic design-process dependencies (proximity, etch, stress) that are of first rate importance.

Their impact on the design will continue to grow requiring a substantial change in the design approaches and practices. 3 BACK END VARIABILITY We must beat the iron while it is hot, but we may polish it at leisure. 1 INTRODUCTION The back end of the IC fabrication process refers to the steps which form the interconnect or wiring for the circuit, as well as any passive devices such as integrated inductors or capacitors formed within the interconnect process layers. Because the back end process shares many technologies and tools with the front end, many of the variations affecting the front end are also operative here, particularly those related to lithography and etch.

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Design for Manufacturability and Statistical Design: A Constructive Approach by Michael Orshansky

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