By Suryadevara Babu
Advances in Chemical Mechanical Planarization (CMP) provides the most recent details on a mainstream approach that's severe for high-volume, high-yield semiconductor production, or even extra in order gadget dimensions proceed to decrease. The know-how has grown to surround the removing and planarization of a number of steel and dielectric fabrics and layers either on the gadget and the metallization degrees, utilizing various instruments and parameters, requiring advancements within the keep an eye on of topography and defects.
This vital booklet bargains a scientific evaluation of basics and advances within the zone. half One covers CMP of dielectric and steel motion pictures, with chapters targeting using specific innovations and techniques, and on CMP of specific quite a few fabrics, together with extremely low-k fabrics and high-mobility channel fabrics, and finishing with a bankruptcy reviewing the environmental affects of CMP approaches.
Part addresses consumables and method regulate for stronger CMP, and contains chapters at the practise and characterization of slurry, diamond disc pad conditioning, using FTIR spectroscopy for characterization of floor methods, and techniques for defection characterization, mitigation, and reduction.
- Considers recommendations and approaches for CMP of dielectric and steel films
- Includes chapters dedicated to CMP for specific materials
- Addresses consumables and technique regulate for more desirable CMP
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Additional info for Advances in Chemical Mechanical Planarization (CMP)
In POC, within-die/within-wafer oxide, nitride thickness control, and defect control are keys for successful implementation of a RMG. The key process performance that must be met in POC is to minimize both polishing scratches and nitride loss by maximizing MRR selectivity between oxide and nitride. The remaining nitride thickness after POC can directly impact on the ﬁnal gate height. Therefore, it is critical to achieve the maximum removal rate selectivity between oxide and nitride and, therefore, to minimize any nitride erosion after the POC process.
7, barring any new technological breakthrough. 4 Depiction of issues associated with integration of porous ultra-low-k materials. 5 Effective dielectric constant in Cu interconnects—ITRS roadmap projections. From Ref. 23. 24 Since at least 200e300 Å of the dielectric should be removed during liner CMP for reliability, slurries are formulated with surfactants and additives to control the dielectric removal rate. Many of these surfactants are incorporated into the dielectric and change the k values.
In general, slurry bufﬁng is not used as the second process step because of the concern of additional oxide and SiN loss. 29. 6 Future of dielectric CMP In modern semiconductor fabrication technology, CMP was used to fabricate the transistor gate and can make a direct impact on gate height control. Gate height is one of the critical parameters to control in semiconductor manufacturing because it can determine device performance and wafer die yield. Fabrication processes in gate formation need molecular-scale proﬁle control and defect-free process capability.
Advances in Chemical Mechanical Planarization (CMP) by Suryadevara Babu